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IPB100N06S205ATMA4 Real Image
Same model may have multiple batches, images only for reference.

IPB100N06S205ATMA4

Part No IPB100N06S205ATMA4
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 135983-IPB100N06S205ATMA4
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IPB100N06S205ATMA4 CAD Model

Description

The IPB100N06S205ATMA4 is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Supply and demand status: limited
  • Power Dissipation: 300W (Tc)
  • Maximum Rds On at Id, Vgs: 4.7 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 5110pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
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22+ $5.1759 $113.8698
34+ $5.0140 $170.4760
47+ $4.8523 $228.0581
60+ $4.6906 $281.4360
80+ $4.2054 $336.4320
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Availability: 6,728 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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