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IPB120N06S402ATMA2

Part No IPB120N06S402ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO263-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Surface Mount PG-TO263-3-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15750 pF @ 25 V
Power Dissipation (Max) 188W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package PG-TO263-3-2
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB120
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IPB120N06S402ATMA2-ND,448-IPB120N06S402ATMA2DKR,448-IPB120N06S402ATMA2TR,448-IPB120N06S402ATMA2CT,SP001028776
Standard Package 1,000
Win Source Part Number 1325367-IPB120N06S402ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB120N06S402ATMA2 CAD Model

Description

The IPB120N06S402ATMA2 is an N-channel enhancement mode MOSFET transistor manufactured by Infineon Technologies.

  • Vgs (Max): ±20V
  • Rds On (Max): 2.8mOhm @ 100A and 10V
  • Package: PG-TO263-3-2
  • Standard Package: 1,000
  • ROHS3 Compliant: Yes
  • REACH Unaffected: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3491 $52.1892
29+ $3.5685 $103.4865
44+ $3.4570 $152.1080
60+ $3.3455 $200.7300
78+ $3.2340 $252.2520
104+ $2.8994 $301.5376
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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