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Same model may have multiple batches, images only for reference.
IPB160N04S4-H1 Real Image
Same model may have multiple batches, images only for reference.

IPB160N04S4-H1

Part No IPB160N04S4-H1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS-T2 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186034-IPB160N04S4-H1
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB160N04S4-H1 CAD Model

Description

The Infineon IPB160N04S4-H1 is a highly efficient power MOSFET designed for low voltage, high-speed switching applications.

  • Drain-Source Voltage: 40V
  • Continuous Drain Current: 160A
  • On-State Resistance: 4mOhm
  • Gate Charge: 45nC
  • Package: TO-263-7
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2524 $50.0960
100+ $1.0276 $102.7600
155+ $0.9955 $154.3025
210+ $0.9634 $202.3140
270+ $0.9313 $251.4510
360+ $0.8349 $300.5640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,800 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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