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IPB200N15N3G

Part No IPB200N15N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPB200N15 - 12V-300V N-CHANNEL P
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 75 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 158271-IPB200N15N3G
Ultra Librarian 3D Model Ultra Librarian IPB200N15N3G CAD Model

Description

The IPB200N15N3G is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™ 3
  • Drain to Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id) @ 25°C: 50A
  • On-Resistance (Rds On): 20mOhm @ 50A and 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 90µA
  • Application: High power applications
  • Suitable for: Power supplies, motor control, and automotive applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4739 $51.9519
50+ $2.0299 $101.4950
77+ $1.9665 $151.4205
106+ $1.9030 $201.7180
136+ $1.8396 $250.1856
182+ $1.6493 $300.1726
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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Shipping Information

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