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Same model may have multiple batches, images only for reference.
IPB50N10S3L16ATMA2
Same model may have multiple batches, images only for reference.

IPB50N10S3L16ATMA2

Part No IPB50N10S3L16ATMA2
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 100V 70A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4180 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Ultra Librarian 3D Model Ultra Librarian IPB50N10S3L16ATMA2 CAD Model

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