The Infineon Technologies IPB60R280C6 is a MOSFET transistor that is designed for use in discrete semiconductor products.

• FET Type: N-Channel
• Power Dissipation (Max) @ Tc: 104 W
• Voltage - Drain to Source Breakdown (Vdss): 600 V
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
• Package / Case: PG-TO263-2
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Gate-Source Voltage: ±20V
• Vgs(th) (Max) @ Id: 3.5V @ 430μA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) @ Vds: 950 pF @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Lifecycle Status: Active
• Supply and Demand Status: Sufficient