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IPB60R360P7ATMA1

Part No IPB60R360P7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A D2PAK  /  N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V
Power Dissipation (Max) 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R360
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001664948,IPB60R360P7ATMA1TR,IPB60R360P7ATMA1CT,INFINFIPB60R360P7ATMA1,IPB60R360P7ATMA1DKR,IPB60R360P7ATMA1-ND,2156-IPB60R360P7ATMA1
Standard Package 1,000
Win Source Part Number 1015171-IPB60R360P7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R360P7ATMA1 CAD Model

Description

The IPB60R360P7ATMA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 9A
  • Rds On: 360mOhm @ 2.7A and 10V
  • Supplier Device Package: PG-TO263-3
  • Mounting: SMD (SMT)
  • Packaging: Tape and reel
  • Standard Package: 1,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.7588 $61.3116
17+ $7.1866 $122.1722
25+ $6.9621 $174.0525
35+ $6.7376 $235.8160
45+ $6.5130 $293.0850
60+ $5.8392 $350.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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