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Same model may have multiple batches, images only for reference.
IPB60R600C6 Real Image
Same model may have multiple batches, images only for reference.

IPB60R600C6

Part No IPB60R600C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.3A TO263
Datasheet
IPB60R600C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 200μA
Max Gate Charge 20.5nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045806-IPB60R600C6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB60R600C6 CAD Model

Description

The Infineon Technologies IPB60R600C6 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 63W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 7.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 200μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 600 mOhm @ 2.4A, 10V
  • Mounting Technology: Surface Mount
  • Case/Package: PG-TO263-2
  • Supply and Demand Status: Sufficient

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