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Same model may have multiple batches, images only for reference.
IPB60R600CP Real Image
Same model may have multiple batches, images only for reference.

IPB60R600CP

Part No IPB60R600CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 100 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 433 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603365-IPB60R600CP
Ultra Librarian 3D Model Ultra Librarian IPB60R600CP CAD Model

Description

The IPB60R600CP is a single N-channel MOSFET transistor from the CoolMOS™ series.

  • Series: CoolMOS™
  • Category: Discrete semiconductor products - transistors - FETs, MOSFETs
  • Vdss (Drain to Source Voltage): 600V
  • Id (Continuous Drain Current): 6.1A @ 25°C
  • Rds On (Max): 600mOhm @ 3.3A, 10V
  • Vgs(th) (Gate Threshold Voltage): 3.5V @ 220μA
  • Power Dissipation: 60W
  • Package: TO-263-3, D²Pak
  • Mounting Type: Surface mount
  • Qg (Gate Charge): 27nC @ 10V
  • Ciss (Input Capacitance): 550pF @ 100V
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Infineon Technologies
  • Status: Active

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