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IPB65R225C7ATMA1

Part No IPB65R225C7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A D2PAK / N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB65R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPB65R225C7ATMA1CT,2156-IPB65R225C7ATMA1,IPB65R225C7ATMA1DKR,ROCINFIPB65R225C7ATMA1,SP000992480,IPB65R225C7ATMA1TR
Standard Package 1,000
Win Source Part Number 998794-IPB65R225C7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB65R225C7ATMA1 CAD Model

Description

The IPB65R225C7ATMA1 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Series: CoolMOS™ C7
  • Vdss: 650 V
  • Id: 11A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
  • Qg (Max) @ Vgs: 20 nC @ 10 V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1820 $60.4580
45+ $2.6110 $117.4950
69+ $2.5294 $174.5286
95+ $2.4478 $232.5410
123+ $2.3661 $291.0303
164+ $2.1214 $347.9096
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Availability: 18,080 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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