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Same model may have multiple batches, images only for reference.
IPB80N04S3-06 Real Image
Same model may have multiple batches, images only for reference.

IPB80N04S3-06

Part No IPB80N04S3-06
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 52μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 3250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068980-IPB80N04S3-06
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB80N04S3-06 CAD Model

Description

The Infineon Technologies IPB80N04S3-06 is a MOSFET transistor IC.

  • Type: N-channel power MOSFET
  • Drain-source voltage rating: 40V
  • Continuous drain current rating: 80A
  • Applications: power supplies, motor control systems, and lighting systems
  • Supply and demand status: limited
  • Package: PG-TO263-3-2
  • Power dissipation: 100W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8392 $64.3720
80+ $1.5091 $120.7280
120+ $1.4620 $175.4400
165+ $1.4149 $233.4585
215+ $1.3677 $294.0555
285+ $1.2261 $349.4385
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Availability: 8,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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