The IPB80N04S4L-04ATMA1 is a Power MOSFET from Infineon Technologies, belonging to their OptiMOS™ family. This N-channel MOSFET is specifically designed for synchronous rectification in switched-mode power supplies (SMPS) and other high-efficiency power conversion applications. It boasts an extremely low on-state resistance (Rds(on)) to minimize conduction losses.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• OR-ing MOSFETs
• High-efficiency power supplies
• Battery-powered applications

Features

• N-channel MOSFET
• Extremely low on-state resistance (Rds(on))
• Optimized for synchronous rectification
• Logic-level gate drive
• Avalanche rated
• TO-263 (D2PAK) package

Benefits

• Significantly reduced conduction losses for improved efficiency
• Higher power density due to reduced heat dissipation
• Simplified gate drive requirements
• Robust performance under transient conditions
• Suitable for high-frequency operation

Additional Details

The IPB80N04S4L-04ATMA1 is designed to minimize conduction losses, making it a suitable choice for synchronous rectification in SMPS. The extremely low Rds(on) reduces the voltage drop across the MOSFET, leading to increased efficiency. The logic-level gate drive simplifies the design of the gate drive circuitry. The avalanche rating ensures that the device can withstand voltage transients. The TO-263 package provides good thermal performance for high-power applications. The optimized gate charge (Qg) and output capacitance (Coss) further contribute to efficient switching performance. This MOSFET is designed for demanding power electronics applications where high efficiency and reliability are critical.