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Same model may have multiple batches, images only for reference.
IPB80N06S405ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB80N06S405ATMA1

Part No IPB80N06S405ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO263-3
Datasheet
IPB80N06S405ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378623-IPB80N06S405ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB80N06S405ATMA1 CAD Model

Description

The IPB80N06S405ATMA1 is a single MOSFET transistor designed for power applications.

  • Manufacturer: Infineon Technologies
  • Temperature Range: -55°C to 175°C
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 80A
  • On-State Resistance: 5.4mOhm @ 80A and 10V
  • Gate Charge: 81nC @ 10V
  • Maximum Gate Voltage: ±20V
  • Package: TO-263-3
  • Mounting Type: Surface Mount
  • Series: OptiMOS™

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