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Same model may have multiple batches, images only for reference.
IPB80P03P4L07ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB80P03P4L07ATMA1

Part No IPB80P03P4L07ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 80A TO263-3
Datasheet
IPB80P03P4L07ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 130μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 5700pF @ 25V
Maximum Gate-Source Voltage +5V, -16V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 6.9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045835-IPB80P03P4L07ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80P03P4L07ATMA1 CAD Model

Description

The Infineon Technologies IPB80P03P4L07ATMA1 is a P-channel MOSFET that has a drain-source breakdown voltage of 30V and a continuous drain current of 80A at 25°C.

  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Power Dissipation: 88W
  • Case/Package: PG-TO263-3-2
  • Gate-Source Threshold Voltage: 2V @ 130μA
  • Maximum Rds On: 6.9 mOhm @ 80A, 10V
  • Popularity: Medium

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