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Same model may have multiple batches, images only for reference.
IPD088N04LG Real Image
Same model may have multiple batches, images only for reference.

IPD088N04LG

Part No IPD088N04LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A TO252-3
Datasheet
IPD088N04LG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 16μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 2100pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040633-IPD088N04LG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD088N04LG CAD Model

Description

The Infineon Technologies 040633-IPD088N04LG is a N-channel MOSFET with a maximum power dissipation of 47W at Tc.

  • Type: N-channel MOSFET
  • Power Dissipation: 47W @ Tc
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Rds On: 8.8 mOhm @ 50A, 10V
  • Status: obsolete(EOL)
  • Popularity: medium
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1952 $58.5600
720+ $0.1605 $115.5600
1,115+ $0.1559 $173.8285
1,540+ $0.1502 $231.3080
1,985+ $0.1455 $288.8175
2,655+ $0.1305 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,500 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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