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Same model may have multiple batches, images only for reference.
IPD30N03S2L10ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD30N03S2L10ATMA1

Part No IPD30N03S2L10ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO252-3
Datasheet
IPD30N03S2L10ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045861-IPD30N03S2L10ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD30N03S2L10ATMA1 CAD Model

Description

The Infineon Technologies IPD30N03S2L10ATMA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 30A at 25°C.

  • Maximum Power Dissipation: 100W @ Tc
  • Maximum Rds On: 10 mOhm @ 30A and 10V
  • Gate-Source Threshold Voltage: 2V @ 50μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Mounting Technology: SMD (SMT)
  • Package: PG-TO252-3

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