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IPD60R2K1CEBTMA1

Name: IPD60R2K1CEBTMA1
Brand: Infineon Technologies
SKU: 1378629
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IPD60R2K1CEBTMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 2.3A TO252-3
Datasheet	IPD60R2K1CEBTMA1 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ CE
Package	Tape & Reel
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	22W (Tc)
Temperature Range - Operating	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD60R
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1378629-IPD60R2K1CEBTMA1
Ultra Librarian 3D Model	Ultra Librarian IPD60R2K1CEBTMA1 CAD Model

Alternative Products

Description

The IPD60R2K1CEBTMA1 is a N-Channel MOSFET designed for power switching applications and is part of the CoolMOS™ CE series by Infineon Technologies.

Operating Temperature: -40°C to 150°C
Drain-to-Source Voltage (Vdss): 600V
Continuous Drain Current (Id): 2.3A
On-Resistance (Rds On): 2.1Ohm
Gate Threshold Voltage (Vgs(th)): 3.5V
Gate Charge (Qg): 6.7 nC
Mounting Type: Surface mount
Package: TO-252-3

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