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Same model may have multiple batches, images only for reference.
IPD60R460CEAUMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD60R460CEAUMA1

Part No IPD60R460CEAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description CONSUMER / N-Channel 600 V 13.1A (Tj) 74W Surface Mount PG-TO252-3-344
Datasheet
IPD60R460CEAUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 460mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 100 V
Power Dissipation (Max) 74W
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD60R
Standard Package 2,500 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1206312-IPD60R460CEAUMA1
Ultra Librarian 3D Model Ultra Librarian IPD60R460CEAUMA1 CAD Model

Description

The 1206312-IPD60R460CEAUMA1 is a N-channel MOSFET transistor from the CoolMOS™ CE series. It is designed for high-power applications and offers excellent performance and reliability.

  • Drain-to-source voltage (Vdss): 600 V
  • Continuous drain current (Id) @ 25°C: 13.1A
  • Rds On: 460mOhm @ 3.4A and 10V
  • Mounting Type: Surface Mountable
  • Package: TO-252-3
  • Operating Temperature Range: -40°C to 150°C
  • Manufacturer: Infineon Technologies

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