The IPD60R950C6ATMA1 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 4.4A @ 25°C from Infineon Technologies.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 4.4A @ 25°C
• Rds On (Max): 950 mOhm @ 1.5A and 10V
• Gate-Source Voltage (Max): ±20V
• Gate Charge (Max): 13nC @ 10V
• Input Capacitance (Max): 280pF @ 100V
• Category: Discrete Semiconductor Products
• Mounting Type: Surface-Mount
• Power Dissipation: 37W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Package: PG-TO252-3
• Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63