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Same model may have multiple batches, images only for reference.
IPD65R650CEAUMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD65R650CEAUMA1

Part No IPD65R650CEAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO-252 / Trans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R
Datasheet
IPD65R650CEAUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS CE
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 210μA
Gate Charge (Qg) (Maximum) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 440pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 86W (Tc)
Rds On (Maximum) @ Id, Vgs 650 mOhm @ 2.1A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776866-IPD65R650CEAUMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPD65R650CE
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPD65R650CEAUMA1 CAD Model

Description

The Infineon Technologies 776866-IPD65R650CEAUMA1 is a MOSFET transistor manufactured by Infineon Technologies.

  • Current Rating: 7A
  • Maximum Drain-Source Voltage: 650V
  • Maximum Power Dissipation: 86W
  • Maximum On-Resistance: 650 mOhm @ 2.1A and 10V
  • Package: TO-252-3, DPak
  • Halogen-Free: Yes
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
95+ $0.5495 $52.2025
225+ $0.4509 $101.4525
345+ $0.4368 $150.6960
475+ $0.4227 $200.7825
615+ $0.4086 $251.2890
820+ $0.3664 $300.4480
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Availability: 20,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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