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Same model may have multiple batches, images only for reference.
IPD70N10S312ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD70N10S312ATMA1

Part No IPD70N10S312ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO252-3
Datasheet
IPD70N10S312ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 4355pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 11.1 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 116789-IPD70N10S312ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD70N10S312ATMA1 CAD Model

Description

The Infineon Technologies MOSFET 116789-IPD70N10S312ATMA1 is a high power N-channel polarity component that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 70A @ 25°C
  • Maximum Rds On @ Id,Vgs: 11.1 mOhm @ 70A, 10V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Applications: power supplies, motor control, and lighting systems
  • Temperature Range: -55°C to 175°C (TJ)

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