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Same model may have multiple batches, images only for reference.
IPD70N10S3L-12 Real Image
Same model may have multiple batches, images only for reference.

IPD70N10S3L-12

Part No IPD70N10S3L-12
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO252-3
Datasheet
IPD70N10S3L-12 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 83μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 5550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045892-IPD70N10S3L-12
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD70N10S3L-12 CAD Model

Description

The Infineon Technologies IPD70N10S3L-12 is an N-channel MOSFET with a maximum power dissipation of 125W @ Tc.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 70A @ 25°C
  • Category: Discrete Semiconductor Product
  • Package: PG-TO252-3
  • Popularity: Medium
  • Supply and Demand: Limited

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