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IPD70P04P409ATMA1

Name: IPD70P04P409ATMA1
Brand: Infineon Technologies
SKU: 763547
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	IPD70P04P409ATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH TO252-3
Datasheet	IPD70P04P409ATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS
Packaging	Reel package
Channel Type Type	P
Technology	MOSFET
Drain Source Voltage	40V
Current - Continuous Drain (Id) @ 25°C	73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	4V @ 120μA
Gate Charge (Qg) (Maximum) @ Vgs	70nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	4810pF @ 25V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	75W (Tc)
Rds On (Maximum) @ Id, Vgs	8.9 mOhm @ 70A, 10V
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting	SMD
Manufacturer Package	PG-TO252-3-313
Package	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	763547-IPD70P04P409ATMA1
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IPD70P04P4-09
Introduction Date	May 26, 2010
ECCN	EAR99
Country of Origin	Malaysia
Halogen Free	Compliant
Estimated EOL Date	2021
Ultra Librarian 3D Model	Ultra Librarian IPD70P04P409ATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies IPD70P04P409ATMA1 is a high-performance P-channel power MOSFET.

Drain-Source Voltage: 40V
Continuous Drain Current: 73A
On-Resistance: Low
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Halogen-Free: Yes
Popularity: High
Supply and Demand Status: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
80+	$0.6642	$53.1360
165+	$0.6214	$102.5310
250+	$0.6000	$150.0000
360+	$0.5571	$200.5560
470+	$0.5357	$251.7790
585+	$0.5143	$300.8655

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 73,500 pieces

MOQ: 80 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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