The Infineon Technologies MOSFET is a N-Channel power transistor designed for use in applications requiring high power dissipation.

• Maximum Power Dissipation: 47W (Tc)
• Discrete Semiconductor Products: Yes
• Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63 dimension
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current @ 25°C: 16A (Tc)
• Gate-Source Threshold Voltage: 4V @ 16μA
• Max Gate Charge: 10nC @ 10V
• Max Input Capacitance: 370pF @ 30V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 80 mOhm @ 16A, 10V
• Status: obsolete (EOL)
• Supply and Demand: balanced