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Same model may have multiple batches, images only for reference.
IPD90N04S3H4ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD90N04S3H4ATMA1

Part No IPD90N04S3H4ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO252-3
Datasheet
IPD90N04S3H4ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 65μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045900-IPD90N04S3H4ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD90N04S3H4ATMA1 CAD Model

Description

The IPD90N04S3H4ATMA1 from Infineon Technologies is an N-channel MOSFET designed for surface mount technology (SMT) mounting.

  • Package: The device is packaged in a PG-TO252-3 measuring TO-252-3, DPak (2 Leads + Tab), SC-63.
  • Maximum Power Dissipation: 115W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 90A (Tc)
  • Maximum Rds On @ Id,Vgs: 4.3 mOhm @ 90A, 10V
  • Category: Discrete semiconductor product
  • Popularity: Medium
  • Suitability for New Designs: Not suitable for new designs
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: Between -55°C and 175°C (TJ)

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