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Same model may have multiple batches, images only for reference.
IPDH6N03LAG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPDH6N03LAG

Part No IPDH6N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A TO252-3-11
Datasheet
IPDH6N03LAG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 30μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 2390pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 016778-IPDH6N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPDH6N03LAG CAD Model

Description

The Infineon Technologies IPDH6N03LAG is an N-channel MOSFET transistor that is designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 50A
  • Gate-Source Threshold Voltage: 2V @ 30μA
  • Maximum Gate Charge: 19nC @ 5V
  • Package: PG-TO252-3
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9746 $58.4760
145+ $0.7997 $115.9565
225+ $0.7748 $174.3300
310+ $0.7497 $232.4070
400+ $0.7248 $289.9200
535+ $0.6498 $347.6430
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Availability: 17,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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