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Same model may have multiple batches, images only for reference.
IPI051N15N5AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI051N15N5AKSA1

Part No IPI051N15N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MV POWER MOS / N-Channel 150 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
Datasheet
IPI051N15N5AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 75 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI051
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065260-IPI051N15N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPI051N15N5AKSA1 CAD Model

Description

The IPI051N15N5AKSA1 is an N-Channel MOSFET from the OptiMOS™ 5 series.

  • Drain to Source Voltage: 150V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum On-Resistance: 5.1mOhm @ 60A and 10V
  • Mountable: Through-hole
  • Package: TO-262-3
  • Gate Charge: 100nC @ 10V
  • Input Capacitance: 7800pF @ 75V
  • Temperature Range: -55°C to 175°C
  • Manufacturer: Infineon Technologies
  • Market Status: Active

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49+ $5.9632 $292.1968
65+ $5.3463 $347.5095
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Availability: 5,570 pieces
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