The Infineon Technologies MOSFET is a high-performance electronic component with a N-Channel polarity.

• Polarity: N-Channel
• Power Dissipation: 300W (Tc)
• Drain-Source Breakdown Voltage: 150V
• Mounting: Through Hole
• Package: PG-TO262-3
• Package Dimensions: TO-262-3 Long Leads, I2Pak, TO-262AA
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
• Category: Discrete Semiconductor Products
• Drive Voltage: 8V, 10V
• Operating Temperature: -55°C to 175°C (TJ)
• Gate-Source Voltage (Max): ±20V
• Gate Charge (Max): 93nC @ 10V
• Input Capacitance (Max): 5470pF @ 75V
• Status: Active
• Applications: RF/IF and RFID
• Alternative Parts: AOW2500, IPI075N15N3 G, IPI075N15N3GXKSA1, IPI076N15N5AKSA1