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IPI086N10N3GXKSA1

Part No IPI086N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO262-3 / Trans MOSFET N-CH 100V 80A Automotive 3-Pin(3+Tab) TO-262 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.5V @ 75μA
Gate Charge (Qg) (Maximum) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3980pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 8.6 mOhm @ 73A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776877-IPI086N10N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPI086N10N3G
Introduction Date February 17, 2009
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPI086N10N3GXKSA1 CAD Model

Description

The Infineon Technologies OptiMOS IPI086N10N3GXKSA1 is a MOSFET device manufactured by Infineon Technologies.

  • Mounting: Through-hole
  • Current Continuous Drain @ 25°C: 80A (Tc)
  • Voltage Load Range: -55°C to 175°C (TJ)
  • Channel Type: N
  • Drain Source Voltage: 100V
  • Maximum Vgs: ±20V
  • Maximum Power Dissipation: 125W (Tc)
  • Maximum Rds On @ 73A, 10V: 8.6 mOhm
  • Estimated EOL Date: 2027

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 410 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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