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IPI08CN10N G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI08CN10N G

Part No IPI08CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 95A TO262-3  /  N-Channel 100 V 95A (Tc) 167W (Tc) Through Hole PG-TO262-3
Datasheet
IPI08CN10N G Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 50 V
Power Dissipation (Max) 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI08C
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000208926,IPI08CN10NG,IPI08CN10N G-ND
Standard Package 500
Win Source Part Number 1027625-IPI08CN10N G
Ultra Librarian 3D Model Ultra Librarian IPI08CN10N G CAD Model

Description

The Infineon Technologies 1027625-IPI08CN10N G is an N-channel MOSFET transistor from the OptiMOS™ series.

  • Channel Type: N-channel
  • Series: OptiMOS™
  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 95A (Tc)
  • Maximum On-Resistance: 8.5mOhm @ 95A and 10V
  • Gate Threshold Voltage: 4V @ 130μA
  • Package Type: Through-hole
  • Operating Temperature: -55°C to 175°C (TJ)
  • Product Status: Obsolete

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