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IPI50R350CP

Part No IPI50R350CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 10A TO262-3 / N-Channel 550 V 10A (Tc) 89W (Tc) Through Hole PG-TO262-3
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Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 100 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI50R
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874802-IPI50R350CP
Ultra Librarian 3D Model Ultra Librarian IPI50R350CP CAD Model

Description

The 874802-IPI50R350CP is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 550V
  • Continuous Drain Current (Id): 10A @ 25°C
  • Applications: Suitable for various applications in the electronics industry.
  • Rds On (Max): 350mOhm @ an Id of 5.6A and a Vgs of 10V
  • Gate Charge (Qg): 25nC @ a Vgs of 10V
  • Input Capacitance (Ciss): 1020pF @ a Vds of 100V
  • Mounting: Through-hole
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation (Max): 89W
  • Product Status: Obsolete

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