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Same model may have multiple batches, images only for reference.
IPI80N04S303AKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI80N04S303AKSA1

Part No IPI80N04S303AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO262-3 / Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube
Datasheet
IPI80N04S303AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 120μA
Gate Charge (Qg) (Maximum) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7300pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 188W (Tc)
Rds On (Maximum) @ Id, Vgs 3.5 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776885-IPI80N04S303AKSA1
Popularity Medium
Supply and Demand Status Balance
Family Name IPI80N04S303AKSA1
Introduction Date February 20, 2007
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IPI80N04S303AKSA1 CAD Model

Description

The Infineon Technologies 776885-IPI80N04S303AKSA1 is a MOSFET transistor with a continuous drain current of 80A (Tc).

  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting: through-hole
  • Drain-Source Voltage: 40V
  • Gate-Source Threshold Voltage: 4V @ 120µA
  • Maximum Input Capacitance: 7300pF @ 25V
  • Gate Charge: 110nC @ 10V
  • Operating Temperature Range: -55°C to 175°C
  • Series: OptiMOS
  • Halogen-free Standards Compliance: Yes

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