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Same model may have multiple batches, images only for reference.
IPP029N06N Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP029N06N

Part No IPP029N06N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 24A TO220
Datasheet
IPP029N06N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2.8V @ 75μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 4100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs 2.9 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 205235-IPP029N06N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP029N06N CAD Model

Description

The Infineon Technologies IPP029N06N is a MOSFET technology-based electronic component with an N-channel polarity.

  • Category: Discrete semiconductor products
  • Popularity: Medium popularity
  • Supply and Demand Status: Limited
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 24A (Ta), 100A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 75μA
  • Maximum Gate Charge: 56nC @ 10V
  • Dimension: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0848 $54.2400
115+ $0.8901 $102.3615
175+ $0.8623 $150.9025
240+ $0.8345 $200.2800
310+ $0.8067 $250.0770
415+ $0.7232 $300.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 174,150 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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