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IPP032N06N3 G

Part No IPP032N06N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 2016+
Reference case TO220
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 753699-IPP032N06N3 G
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP032N06N3 G CAD Model

Description

The IPP032N06N3 G is a power MOSFET from Infineon Technologies, designed for high-efficiency power conversion and motor control applications. This N-channel MOSFET utilizes Infineon's OptiMOS™ technology to deliver excellent switching performance, low on-resistance, and high avalanche ruggedness, making it a suitable choice for demanding power management systems.

Applications:

  • Synchronous Rectification: Used in synchronous rectification circuits for improved efficiency in power supplies.
  • DC-DC Converters: Employed in DC-DC converters for various applications, including server power and telecom systems.
  • Motor Control: Suitable for motor control applications in automotive and industrial systems.
  • Solar Inverters: Used in solar inverters to convert DC power from solar panels to AC power.
  • Battery Management Systems (BMS): Employed in BMS for battery charging and discharging control.

Features:

  • Low On-Resistance (RDS(on)): Offers very low on-resistance for reduced conduction losses and improved efficiency.
  • High Avalanche Ruggedness: Designed to withstand high avalanche energy, enhancing system reliability.
  • Fast Switching Speed: Provides fast switching speed for reduced switching losses.
  • Logic Level Drive: Can be driven directly by logic-level signals, simplifying the gate drive circuitry.
  • Lead-Free Package: Available in a lead-free package, complying with environmental regulations.
  • Optimized for Synchronous Rectification: Specifically optimized for synchronous rectification applications.

Benefits:

  • Improved Efficiency: Low on-resistance and fast switching speed result in improved system efficiency.
  • Increased Reliability: High avalanche ruggedness enhances system reliability and prevents damage.
  • Simplified Design: Logic level drive simplifies the gate drive circuitry and reduces the number of external components.
  • Reduced Power Consumption: Low on-resistance minimizes conduction losses and reduces power consumption.
  • Enhanced Thermal Performance: Optimized thermal performance allows for operation at higher temperatures.

Additional Details:

The IPP032N06N3 G is typically packaged in a TO-220 or similar package for easy mounting and heat dissipation. The device is designed to operate over a wide temperature range and is suitable for use in harsh environments. Detailed specifications, including drain-source voltage, gate-source voltage, drain current, and thermal resistance, are available in the product datasheet.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1404 $62.7220
125+ $0.9357 $116.9625
195+ $0.9064 $176.7480
265+ $0.8773 $232.4845
345+ $0.8480 $292.5600
460+ $0.7602 $349.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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