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IPP034N03LGXKSA1

Name: IPP034N03LGXKSA1
Brand: Infineon Technologies
SKU: 776893
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPP034N03LGXKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 80A TO-220-3 / Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube
Datasheet	IPP034N03LGXKSA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	OptiMOS
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	30V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs(th) (Maximum) @ Id	2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs	51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	5300pF @ 15V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	94W (Tc)
Rds On (Maximum) @ Id, Vgs	3.4 mOhm @ 30A, 10V
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	PG-TO220-3-1
Package	TO-220-3
Win Source Part Number	776893-IPP034N03LGXKSA1
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IPP034N03LGXKSA1
Introduction Date	August 29, 2007
ECCN	EAR99
Country of Origin	China
Halogen Free	Compliant
Estimated EOL Date	2027
Ultra Librarian 3D Model	Ultra Librarian IPP034N03LGXKSA1 CAD Model

Alternative Products

Description

The Infineon Technologies IPP034N03LGXKSA1 is an OptiMOS MOSFET type device.

Current Continuous Drain (Id): 80A (Tc)
Maximum Drain-Source Voltage: 30V
Temperature Range: -55°C to 175°C
Package: TO-220-3
Mounting: through-hole
Gate Charge: 51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5300pF @ 15V
Maximum Power Dissipation: 94W (Tc)
Maximum Rds On: 3.4 mOhm @ 30A, 10V
Halogen-free: Yes
Market Popularity: Medium
Supply and Demand Status: Limited
Estimated EOL Date: 2027

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