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Same model may have multiple batches, images only for reference.
IPP037N08N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP037N08N3GXKSA1

Part No IPP037N08N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 100A TO220-3
Datasheet
IPP037N08N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 155μA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 8110pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 3.75 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 106017-IPP037N08N3GXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP037N08N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP037N08N3GXKSA1 is a MOSFET transistor with an N-channel polarity and a drain-source breakdown voltage of 80V.

  • Maximum Power Dissipation: 214W (Tc)
  • Continuous Drain Current @ 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 155μA
  • Maximum Gate Charge: 117nC @ 10V
  • Maximum Rds On @ Id,Vgs: 3.75 mOhm @ 100A, 10V
  • Mounting Type: Through Hole
  • Package: PG-TO-220-3 package

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5100 $52.6500
35+ $2.8800 $100.8000
54+ $2.7900 $150.6600
75+ $2.7000 $202.5000
96+ $2.6100 $250.5600
129+ $2.3400 $301.8600
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Availability: 16,300 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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