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Same model may have multiple batches, images only for reference.
IPP041N12N3G Real Image
Same model may have multiple batches, images only for reference.

IPP041N12N3G

Part No IPP041N12N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 120A TO220-3
Datasheet
IPP041N12N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 211nC @ 10V
Max Input Capacitance 13800pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069031-IPP041N12N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP041N12N3G CAD Model

Description

The Infineon Technologies IPP041N12N3G is an N-channel MOSFET transistor that has a maximum power dissipation of 300W.

  • Input Type: standard
  • Drive Voltage: 10V
  • Package: PG-TO-220-3
  • Mounting: through-hole
  • Operating Temperature Range: -55°C to 175°C
  • Gate-Source Threshold Voltage: 4V @ 270μA
  • Maximum Gate Charge: 211nC @ 10V

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Quantity Unit Price Ext. Price
6+ $9.9409 $59.6454
15+ $8.1566 $122.3490
22+ $7.9018 $173.8396
31+ $7.6469 $237.0539
40+ $7.3920 $295.6800
53+ $6.6273 $351.2469
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Availability: 170 pieces
MOQ: 6 pcs
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