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Same model may have multiple batches, images only for reference.
IPP05CN10L G Real Image
Same model may have multiple batches, images only for reference.

IPP05CN10L G

Part No IPP05CN10L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220-3
Datasheet
IPP05CN10L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 163nC @ 10V
Max Input Capacitance 15600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045959-IPP05CN10L G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP05CN10L G CAD Model

Description

The Infineon Technologies IPP05CN10L G is an N-Channel MOSFET that is designed to deliver high performance in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 100A @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 163nC @ 10V
  • Maximum Rds On (Id,Vgs): 5.1 mOhm @ 100A, 10V
  • Case/Package: PG-TO-220-3
  • Mounting Type: Through-Hole
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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