The IPP065N06LG is a N-channel MOSFET discrete semiconductor product manufactured by Infineon Technologies.

• Maximum Power Dissipation: 250W (Tc)
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current at 25°C: 80A (Tc)
• Gate-Source Threshold Voltage: 2V @ 180μA
• Maximum Gate Charge: 157nC @ 10V
• Maximum Input Capacitance: 5100pF @ 30V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On at Id, Vgs: 6.5 mOhm @ 80A, 10V
• Product Status: obsolete (EOL)
• Category: discrete semiconductor product
• Packaging: tube/rail form
• Mounting: through hole
• Technology: MOSFET
• Polarity: N-channel
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Operating Temperature Range: -55°C to 175°C (TJ)
• Case or Package: PG-TO220-3-1
• Dimension: TO-220-3
• Supply and Demand Status: limited