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IPP100N04S3-03

Part No IPP100N04S3-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS-T Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186302-IPP100N04S3-03
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP100N04S3-03 CAD Model

Description

The IPP100N04S3-03, manufactured by Infineon Technologies, is a high-performance OptiMOS™ 3 power MOSFET designed for demanding applications requiring efficient power conversion. This N-channel enhancement mode MOSFET offers extremely low on-state resistance (RDS(on)) and optimized switching characteristics, enabling significant reductions in power losses and improved thermal performance. It is well-suited for synchronous rectification, DC-DC conversion, and motor control applications.

Applications

  • Synchronous rectification in switched-mode power supplies (SMPS)
  • DC-DC converters for server and telecom power
  • Motor control in industrial drives and power tools
  • Battery management systems (BMS)
  • OR-ing and hot-swap applications

Features

  • Extremely low on-state resistance (RDS(on))
  • Optimized for synchronous rectification
  • Fast switching speed
  • Avalanche rated
  • 100% Avalanche tested
  • Pb-free lead plating; RoHS compliant

Benefits

  • Increased energy efficiency due to low RDS(on)
  • Improved thermal management
  • Reduced system size and cost
  • Enhanced system reliability

Additional Details

The IPP100N04S3-03 features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 100A, depending on the application and cooling conditions. Its very low gate charge (Qg) contributes to its fast switching behavior, minimizing switching losses at high frequencies. The device is available in a PG-TO220 package, providing excellent thermal dissipation. The remarkably low RDS(on) significantly reduces conduction losses, boosting overall system efficiency. This MOSFET is particularly effective in synchronous rectification topologies, where it replaces rectifier diodes, leading to substantial improvements in power supply efficiency.

The avalanche rating of the IPP100N04S3-03 ensures robust performance in environments prone to voltage transients. By minimizing both conduction and switching losses, this device helps designers meet stringent energy efficiency standards. Its compliance with RoHS further ensures its suitability for environmentally conscious designs. Combining low RDS(on), fast switching, and a robust design makes the IPP100N04S3-03 a strong choice for various power management needs where efficiency and reliability are paramount. OptiMOS™ transistors from Infineon are known for their high performance in modern power supplies.

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