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Same model may have multiple batches, images only for reference.
IPP16CN10LG Real Image
Same model may have multiple batches, images only for reference.

IPP16CN10LG

Part No IPP16CN10LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 100V 54A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220
Continuous Drain Current (ID) 54 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 15.7 mΩ
Drain to Source Voltage (Vdss) 100 V
Element Configuration Single
Fall Time 4 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 4.19 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 100 W
Min Operating Temperature -55 °C
Mount Through Hole
Nominal Vgs 1.84 V
Number of Pins 3
Power Dissipation 100 W
Radiation Hardening No
Rds On Max 15.7 mΩ
REACH SVHC No SVHC
Rise Time 8 ns
RoHS Compliant
Turn-Off Delay Time 30 ns
Turn-On Delay Time 11 ns
Win Source Part Number 1065291-IPP16CN10LG
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IPP16CN10LG CAD Model

Description

The Infineon Technologies IPP16CN10LG is a transistor-FET with a MOSFET-RF.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (ID): 54A
  • Package: TO-220
  • Maximum Power Dissipation: 100W
  • Operating Temperature: -55°C to 175°C
  • Supply and Demand Status: Short

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