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Same model may have multiple batches, images only for reference.
IPP26CN10NGHKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP26CN10NGHKSA1

Part No IPP26CN10NGHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO-220
Datasheet
IPP26CN10NGHKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 39μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 2070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 131337-IPP26CN10NGHKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP26CN10NGHKSA1 CAD Model

Description

The Infineon Technologies 131337-IPP26CN10NGHKSA1 is a MOSFET that belongs to the category of discrete semiconductor products.

  • Mounting: Through-hole
  • Polarity: N-channel
  • Status: Obsolete, EOL
  • Supply and Demand Status: Limited

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