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Same model may have multiple batches, images only for reference.
IPP45N06S3-16 Real Image
Same model may have multiple batches, images only for reference.

IPP45N06S3-16

Part No IPP45N06S3-16
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 45A TO-220
Datasheet
IPP45N06S3-16 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 30μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 2980pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 15.7 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045991-IPP45N06S3-16
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Sensing & Instrumentation, Industrial, Medical, Signal Processing, Communications & Networking, Test & Measurement, Automotive, Audio
Ultra Librarian 3D Model Ultra Librarian IPP45N06S3-16 CAD Model

Description

The Infineon Technologies IPP45N06S3-16 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 65W
  • Continuous Drain Current @ 25°C: 45A
  • Gate-Source Threshold Voltage: 4V @ 30μA
  • Maximum Gate Charge: 57nC @ 10V
  • Maximum Input Capacitance: 2980pF @ 25V
  • Maximum Rds On: 15.7 mOhm @ 23A, 10V
  • Package: PG-TO220-3-1
  • Applications: Sensing and instrumentation, industrial, medical, and automotive

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