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Same model may have multiple batches, images only for reference.
IPP45P03P4L11AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP45P03P4L11AKSA1

Part No IPP45P03P4L11AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 45A TO220-3
Datasheet
IPP45P03P4L11AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 85μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3770pF @ 25V
Maximum Gate-Source Voltage +5V, -16V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 11.1 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045993-IPP45P03P4L11AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP45P03P4L11AKSA1 CAD Model

Description

The Infineon Technologies IPP45P03P4L11AKSA1 is a P-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 45A @ 25°C
  • Maximum Rds On @ Id,Vgs: 11.1 mOhm @ 45A and 10V
  • Maximum Gate-Source Voltage: +5V, -16V
  • Gate-Source Threshold Voltage: 2V @ 85μA
  • Maximum Gate Charge: 55nC @ 10V
  • Package: PG-TO220-3-1
  • Power Dissipation: 58W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0541 $57.9755
135+ $0.8649 $116.7615
210+ $0.8378 $175.9380
285+ $0.8108 $231.0780
370+ $0.7838 $290.0060
495+ $0.7027 $347.8365
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Availability: 23,500 pieces
MOQ: 55 pcs
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