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Same model may have multiple batches, images only for reference.
IPP65R380C6XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP65R380C6XKSA1

Part No IPP65R380C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.6A TO220
Datasheet
IPP65R380C6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1046018-IPP65R380C6XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP65R380C6XKSA1 CAD Model

Description

The IPP65R380C6XKSA1 is a high-performance N-channel MOSFET designed for use in a wide range of applications, including power supplies, motor control, and lighting.

  • Rds On: 380 mOhm
  • Current - Continuous Drain (Id): 10.6 A

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13+ $9.1349 $118.7537
20+ $8.8496 $176.9920
27+ $8.5643 $231.2361
35+ $8.2779 $289.7265
47+ $7.4220 $348.8340
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Availability: 25,000 pieces
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