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IPP65R660CFD

Part No IPP65R660CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 100 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603670-IPP65R660CFD
Ultra Librarian 3D Model Ultra Librarian IPP65R660CFD CAD Model

Description

The 603670-IPP65R660CFD is a CoolMOS™ MOSFET transistor manufactured by Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Subcategory: Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 6A @ 25°C
  • Rds On (Max): 660mOhm @ 2.1A and 10V
  • Power Dissipation (Max): 62.5W
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Gate Charge (Qg): 22 nC @ 10V
  • Input Capacitance (Ciss): 615 pF @ 100V
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3844 $65.6908
15+ $7.7001 $115.5015
24+ $7.4595 $179.0280
32+ $7.2188 $231.0016
42+ $6.9782 $293.0844
56+ $6.2563 $350.3528
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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