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Same model may have multiple batches, images only for reference.
IPP80N03S4L04AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP80N03S4L04AKSA1

Part No IPP80N03S4L04AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO220-3
Datasheet
IPP80N03S4L04AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 45μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 5100pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046031-IPP80N03S4L04AKSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian IPP80N03S4L04AKSA1 CAD Model

Description

The Infineon Technologies IPP80N03S4L04AKSA1 is a N-Channel MOSFET that is packaged in a PG-TO220-3-1 case.

  • Package: PG-TO220-3-1 case
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On @ Id,Vgs: 3.7 mOhm @ 80A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Gate-Source Threshold Voltage: 2.2V @ 45μA
  • Maximum Gate Charge: 75nC @ 10V
  • Maximum Input Capacitance: 5100pF @ 25V
  • Power Dissipation: 94W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)
  • Packaging: Tube/rail packaging, 500 per package

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