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IPS09N03LAG

Part No IPS09N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069095-IPS09N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS09N03LAG CAD Model

Description

The Infineon Technologies IPS09N03LAG is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 25V and a continuous drain current of 50A @ 25°C.

  • Maximum Power Dissipation: 63W
  • Maximum Rds On: 8.8 mOhm @ 30A and 10V
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 13nC @ 5V
  • Maximum Input Capacitance: 1642pF @ 15V
  • Package: PG-TO251-3
  • Dimension: TO-251-3 stub leads, IPak
  • Designed for: discrete semiconductor products
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2454 $50.3070
500+ $0.2014 $100.7000
770+ $0.1951 $150.2270
1,060+ $0.1888 $200.1280
1,370+ $0.1825 $250.0250
1,835+ $0.1636 $300.2060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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