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IPS65R650CEAKMA1

Part No IPS65R650CEAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 10.1A TO251-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number IPS65R650
Standard Package 1,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874874-IPS65R650CEAKMA1
Ultra Librarian 3D Model Ultra Librarian IPS65R650CEAKMA1 CAD Model

Description

The IPS65R650CEAKMA1 is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.

  • Manufacturer: Infineon Technologies
  • Package: Tube
  • Standard Package Quantity: 1,500 pieces
  • Drain to Source Voltage: 700V
  • Continuous Drain Current: 10.1A @ 25°C
  • Rds On (Max): 650mOhm @ 2.1A and 10V
  • ECCN: EAR99
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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