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Same model may have multiple batches, images only for reference.
IPU06N03LAG Real Image
Same model may have multiple batches, images only for reference.

IPU06N03LAG

Part No IPU06N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A TO-251
Datasheet
IPU06N03LAG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069102-IPU06N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU06N03LAG CAD Model

Description

The IPU06N03LAG is a MOSFET transistor manufactured by Infineon Technologies.

  • Designed For: Use in discrete semiconductor products
  • Maximum Power Dissipation: 83W
  • Input Voltage: 4.5V to 10V
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Rds On: 5.9 mOhm @ 30A and 10V
  • Mounting Style: Through-hole
  • Case/Package: PG-TO251-3
  • Operating Temperature Range: -55°C to 175°C
  • Product Status: Obsolete
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.9233 $83.7699
6+ $22.9117 $137.4702
8+ $22.1956 $177.5648
11+ $21.4795 $236.2745
14+ $20.7634 $290.6876
19+ $18.6151 $353.6869
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Availability: 1,430 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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